| PART |
Description |
Maker |
| CJP06N60 |
Power filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP07N20 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP02N60 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology
|
| CJP16N25 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology
|
| IPA65R190CFD IPW65R190CFD IPI65R190CFD IPP64R190CF |
Metal Oxide Semiconduvtor Field Effect Transistor
650V CoolMOS C6 CFD POWER Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
RF Power Field Effect Transistor Array
|
Motorola, Inc
|
| MTV20N50E |
Power Field Effect Transistor
|
ON Semiconductor
|
| CMT14N50 CMT14N50N3P |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
|
| MTM40N20 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF18090A MRF18090AR3 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
